5sGA30J2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode the gto reverse voltage ve may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTo is then driven into reverse avalanche. This condition is not dangerous for the GTo provided avalanche time and current are below 10 us and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation: VGR=10.15 V ABB Semiconductors AG reserves the right to change specifications without notice. ABB ABB Semiconductors AG Doc. No. 5SYA 1213-02 Aug. 2000 Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland +41(0)628886419 +41(0)628886306 E-mail info@ch.abb.com Internet w. abbsem. com5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Doc. No. 5SYA 1213-02 Aug. 2000 Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: +41 (0)62 888 6419 Fax: +41 (0)62 888 6306 E-mail info@ch.abb.com Internet www.abbsem.com Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V