CVD is film growth from vapor/gas phase via chemical reactions in gas and on substrate e.g. SiH4 (g)- Si(s)+2H2(g) Do not want Si to nucleate above substrate(homogeneous nucleation) but on substrate surface(heterogeneous nucleation wall Reactor Transport of precursor Removal of across by-products dead layer to Susceptor substrate olysls: thermal/aun say decomposed species ond to subs decomposition More details at substrate Mon.. Sept. 15. 2003CVD is film growth from vapor/gas phase via chemical reactions in gas and on substrate: homogeneous nucleation), e.g. SiH4 (g) Æ Si (s) + 2H2 (g) Do not want Si to nucleate above substrate ( but on substrate surface (heterogeneous nucleation). Twall Reactor Transport of precursors across dead layer to substrate Pyrolysis: thermal Susceptor film T sub> Twall Chemical reaction: Decomposed species bond to substrate decomposition at substrate More details… by-products Removal of Mon., Sept. 15, 2003 3