工程科学学报，第41卷，第3期：279-291,2019年3月 Chinese Journal of Engineering,Vol.41,No.3:279-291,March 2019 DOI:10.13374/j.issn2095-9389.2019.03.001:http://journals.ustb.edu.cn 卤化物钙钛矿量子点0D2D混合维度异质结构光探 测器的研究进展及挑战 康 卓”，吴华林”，司浩楠”，张跃2区 1)北京科技大学材料科学与工程学院，北京1000832)北京市新能源材料与钠米技术重点实验室，北京100083 ☒通讯作者，E-mail:yuezhange@ustb.ed.cm 摘要综述了多晶卤化物钙钛矿薄膜的局限性，卤化物钙钛矿旷量子点的基本光学性质和制备方法，以及在光电探测器方面 的器件结构研究进展，并重点介绍了应用在0D-2D混合维度异质结基光电晶体管器件的突破，包括界面载流子行为和高性 能光探测器的构建.最后，总结了卤化物钙钛矿量子点作为未来商业化应用的光电子器件和电子器件的候选材料所面临的主 要问题和挑战，譬如化学不稳定性、铅毒性问题、量子点与其他材料间界面高效电荷传输等问题，并提出了解决思路和方法. 这为设计和推进高性能、高稳定性卤化物钙钛矿量子点基光电功能化器件的商业化应用指明了方向. 关键词卤化物钙钛矿量子点：光晶体管：混合维度异质结：光探测器：稳定性 分类号TB34 Halide perovskite quantum dot based OD 2D mixed-dimensional heterostructure photodetectors:progress and challenges KANG Zhuo,WU Hua-in),SI Hao-nan,ZHANG Yue 1)School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China 2)Beijing Municipal Key Laboratory of New Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,China Corresponding author,E-mail:yuezhang@ustb.edu.cn ABSTRACT Due to various advantages such as outstanding light absorption coefficient,long charge carrier diffusion distance,simple synthesis method,and low cost,halide perovskite materials,which are light absorption materials,are widely considered as promising candidates for next-generation electronic and optoelectronic devices such as solar cell,light-emitting diode,photodetector,laser device,X-ray imaging,and information storage devices.Particularly,since the introduction of halide perovskite-based solar cells in 2009,their solar conversion efficiency has increased from 3.8%to 23%,which is almost equal to that of commercial silicon cells,in less than ten years.However,the low phase stability,ion migration-induced hysteresis phenomena,and performance degradation significantly impede the further commercial application development of halide perovskite-based materials.Most recently,more attention has been paid to the zero-dimensional (OD)halide perovskite quantum dots (QDs)as compared to polycrystalline perovskite films because of their unique optical and electrical properties such as high crystalline quality and defect tolerance,flexible composition, quantum confinement effect,and geometric anisotropy.This paper summarized the limitations of the polycrystalline perovskite films and reviewed the intrinsic optical properties and detailed synthesis methods of halide perovskite QDs as well as their applications in optoe- lectronic devices.Specifically,the recent breakthrough on OD-2D mixed-dimensional van der Waals phototransistors was systematically introduced.In addition,some perspectives of mixed-dimensional van der Waals phototransistors,which include interfacial charge carri- 收稿日期：2018-12-11 基金项目：国家重点研究开发计划资助项目(2016YFA0202701):国家自然科学基金资助项目(51527802,51232001,51702014,51372020， 51602020):中央高校基本科研业务费资助项目(FRF-AS.-7002)工程科学学报，第 41 卷，第 3 期: 279--291，2019 年 3 月 Chinese Journal of Engineering，Vol． 41，No． 3: 279--291，March 2019 DOI: 10． 13374 /j． issn2095--9389． 2019． 03． 001; http: / /journals． ustb． edu． cn 卤化物钙钛矿量子点 0D-2D 混合维度异质结构光探 测器的研究进展及挑战 康 卓1) ，吴华林1) ，司浩楠1) ，张 跃1，2)  1) 北京科技大学材料科学与工程学院，北京 100083 2) 北京市新能源材料与纳米技术重点实验室，北京 100083 通讯作者，E-mail: yuezhang@ ustb． edu． cn 摘 要 综述了多晶卤化物钙钛矿薄膜的局限性，卤化物钙钛矿量子点的基本光学性质和制备方法，以及在光电探测器方面 的器件结构研究进展，并重点介绍了应用在 0D － 2D 混合维度异质结基光电晶体管器件的突破，包括界面载流子行为和高性 能光探测器的构建． 最后，总结了卤化物钙钛矿量子点作为未来商业化应用的光电子器件和电子器件的候选材料所面临的主 要问题和挑战，譬如化学不稳定性、铅毒性问题、量子点与其他材料间界面高效电荷传输等问题，并提出了解决思路和方法． 这为设计和推进高性能、高稳定性卤化物钙钛矿量子点基光电功能化器件的商业化应用指明了方向． 关键词 卤化物钙钛矿量子点; 光晶体管; 混合维度异质结; 光探测器; 稳定性 分类号 TB34 收稿日期: 2018--12--11 基金项目: 国家重点研究开发计划资助项目( 2016YFA0202701) ; 国家自然科学基金资助项目( 51527802，51232001，51702014，51372020， 51602020) ; 中央高校基本科研业务费资助项目( FＲF-AS-17-002) Halide perovskite quantum dot based 0D-2D mixed-dimensional heterostructure photodetectors: progress and challenges KANG Zhuo1) ，WU Hua-lin1) ，SI Hao-nan1) ，ZHANG Yue1，2)  1) School of Materials Science and Engineering，University of Science and Technology Beijing，Beijing 100083，China 2) Beijing Municipal Key Laboratory of New Energy Materials and Technologies，University of Science and Technology Beijing，Beijing 100083，China Corresponding author，E-mail: yuezhang@ ustb． edu． cn ABSTＲACT Due to various advantages such as outstanding light absorption coefficient，long charge carrier diffusion distance，simple synthesis method，and low cost，halide perovskite materials，which are light absorption materials，are widely considered as promising candidates for next-generation electronic and optoelectronic devices such as solar cell，light-emitting diode，photodetector，laser device，X-ray imaging，and information storage devices． Particularly，since the introduction of halide perovskite-based solar cells in 2009，their solar conversion efficiency has increased from 3. 8% to 23% ，which is almost equal to that of commercial silicon cells，in less than ten years． However，the low phase stability，ion migration-induced hysteresis phenomena，and performance degradation significantly impede the further commercial application development of halide perovskite-based materials． Most recently，more attention has been paid to the zero-dimensional ( 0D) halide perovskite quantum dots ( QDs) as compared to polycrystalline perovskite films because of their unique optical and electrical properties such as high crystalline quality and defect tolerance，flexible composition， quantum confinement effect，and geometric anisotropy． This paper summarized the limitations of the polycrystalline perovskite films and reviewed the intrinsic optical properties and detailed synthesis methods of halide perovskite QDs as well as their applications in optoe￾lectronic devices． Specifically，the recent breakthrough on 0D-2D mixed-dimensional van der Waals phototransistors was systematically introduced． In addition，some perspectives of mixed-dimensional van der Waals phototransistors，which include interfacial charge carri-