5SDF05D2505 1000 C4=1…3uF C.=1.3uF l=2000A T=125°c 400HVRM:No influence V=1.5.2.5 kV =2000A 300 700A 200 200 200 didt(A/μs) Fig 7 Reverse recovery current vs. turn off di/dt Fig 8 Reverse recovery charge vs. turn off di/dt (max values) (max values) 500 l=300A =700A 125°C 400 T=125°c V=1.5.2.5kV Vu=1.5.25kV di/dt(A/us) di/dt(A/us) Fig. 9 Turn-off energy vs turn-off di/dt for lF= 300 Fig. 10 Turn-off energy Vs. turn-off di/dt for lF =700 A(max values A(max values) ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 5 of 65SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 5 of 6 Fig. 7 Reverse recovery current vs. turn off di/dt (max. values). Fig. 8 Reverse recovery charge vs. turn off di/dt (max. values). Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values). Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values)