J.Semicond.2010,31(12) Han Kefeng et al. power amplifier for mobile RFID reader applications.IEEE Proc AB power amplifiers.IEEE J Solid-State Circuits,2004,39(11): RFIC.2006 1927 [11]Sowlati T,Leenaerts DM W.A 2.4-GHz 0.18 um CMOS self-[14]EPC UHF radio frequency identity protocols:Class 1 Generation biased cascode power amplifier.IEEE J Solid-State Circuits, 2 UHF RFID Ver.1.2.0,EPC global,2007 2003.38(8):1318 [15]Tan Xi,Liu Yuan,Lu Lei,et al.A 1.8 V CMOS direct conversion [12]Yen CC,Chuang H R.A 0.25-um 20-dBm 2.4-GHz CMOS receiver for 900 MHz RFID reader chip.Journal of Semiconduc- power amplifier with an integrated diode linearizer.IEEE Microw tors,2008,29(9):1734 Wireless Compon Lett,2003,13(2):45 [16]Si WW,Mehta S,Samavati H,et al.A 1.9-GHz single-chip [13]Wang C,Vaidyanathan M,Larson L E.A capacitance- CMOS PHS cellphone.IEEE J Solid-State Circuits,2006,41(12): compensation technique for improved linearity in CMOS class- 2737 125005-7J. Semicond. 2010, 31(12) Han Kefeng et al. power amplifier for mobile RFID reader applications. IEEE Proc RFIC, 2006 [11] Sowlati T, Leenaerts D M W. A 2.4-GHz 0.18 m CMOS self￾biased cascode power amplifier. IEEE J Solid-State Circuits, 2003, 38(8): 1318 [12] Yen C C, Chuang H R. A 0.25-m 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer. IEEE Microw Wireless Compon Lett, 2003, 13(2): 45 [13] Wang C, Vaidyanathan M, Larson L E. A capacitance￾compensation technique for improved linearity in CMOS class￾AB power amplifiers. IEEE J Solid-State Circuits, 2004, 39(11): 1927 [14] EPC UHF radio frequency identity protocols: Class 1 Generation 2 UHF RFID Ver. 1.2.0, EPC global, 2007 [15] Tan Xi, Liu Yuan, Lu Lei, et al. A 1.8 V CMOS direct conversion receiver for 900 MHz RFID reader chip. Journal of Semiconduc￾tors, 2008, 29(9): 1734 [16] Si W W, Mehta S, Samavati H, et al. A 1.9-GHz single-chip CMOS PHS cellphone. IEEE J Solid-State Circuits, 2006, 41(12): 2737 125005-7