Background for Schottky barriers When a p-n junction is formed.. (depletion region) =>E field tha there is a net flow of camers halts flow of e's across interface. until energy difference is neutralized and What happens at semiconductor/metal interface ll/703 3.155J6.l52J Schottky barriers When a meta- type semiconductor junction is formed withφa>中… Vacuum Mobile es Heavily n here is a net flow of camers intill energy difference is neutralized and Fermi energies come to a common value depletion region(length governed by screening length) ll/703 3.155J6.l52JBackground for Schottky barriers When a p-n junction is formed... Mobile e’s p Mobile holes Immobile e’s n Immobile holes e - EF EF EF E Excess e’s h’s (depletion region) => E field that halts flow of e’s ... there is a net flow of carriers across interface… until energy difference is neutralized and Fermi energies come to a common value. What happens at semiconductor/metal interface… 11/17/03 3.155J/6.152J 7 fm fs Schottky barriers When a metal -n-type semiconductor junction is formed with > ... Vacuum Vacuum Mobile e’s Immobile holes e - ... there is a net flow of carriers across interface… fm fs n EF EF EF Mobile e’s n fm E Heavily doped EF Lightly doped until energy difference is neutralized and Fermi energies come to a common value. w depletion region (length governed by screening length) 11/17/03 3.155J/6.152J 8 4