RF101L2S Diodes Fast recovery Diode RF101L2S ● Applications .External dimensions(Unit: mm) High frequency rectification 1)Small power mold type(PMDS) 2) Ultra low VF 3)Very fast recovery 12 4)Low switching loss ● Construction Silicon epitaxial planar ● Absolute maximum ratings(a=25°C) symbol roltage(repetitive pea c Reverse voltage(Dc) 200 Average rectified forward current Forward peak surge current(60Hz. 1cyc )IFSM Mounting on glass epoxi board ● Electrical characteristics(Ta=25°C) Symbol Max Forward volta 0.815 0.870 F=1.0A Reverse current 10u VR=200V Reverse recovery time rr=025×|R 1/2 RondRF101L2S Diodes 1/2 Fast recovery Diode RF101L2S zApplications High frequency rectification zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss zConstruction Silicon epitaxial planar zExternal dimensions (Unit : mm) 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 EX. RF101L2S → 6 , 6 EX. 2003,09 → 3 , 9 1 2 3 4 ∗ 1 , ···Type No. 2 3 4, ···Manufacturing date zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 200 V Reverse voltage (DC) VR 200 V Average rectified forward current ∗ IO 1.0 A IFSM 20 A Junction temperature 150 °C Storage temperature −55 to +150 °C ∗ Mounting on glass epoxi board Tj Tstg Forward peak surge current (60Hz 1cyc.) zElectrical characteristics (Ta=25°C) Parameter Symbol Max. Unit Conditions Forward voltage VF 0.870 V IF=1.0A Reverse current IR 10µ A VR=200V Reverse recovery time IF=0.5A trr IR=1.0A Typ. 0.815 10n 12 25 nS Note) ESD sensitive product handing required. Irr=0.25 + IR