RF101L2S Diodes ● Electrical characteristic curves(a=25°C) FORWARD VOLTAGE: VF(V) REVERSE VOLTAGE: VR (V) AMBIENT TEMPERATURE: Ta ('c) Fig 1 Forward temperature Fig 3 Derating curve 服開 乌5零品出 802040608101214161820 AVERAGE RECTIFED FORWARD CURRENT: Io (A) CYCLE Fig 4 Power dissipation Fig5 Forward peak surge current Fig. 6 Capacitance between terminals ECOVERY TIMES: trr(ns) 2/2 RondRF101L2S Diodes 2/2 zElectrical characteristic curves (Ta=25°C) Fig.1 Forward temperature characteristics 0 0.2 0.4 0.6 0.8 1 1000 100 10 1 125°C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) 75°C 25°C −25°C Fig.2 Reverse temperature characteristics 0 10000 1000 100 10 1 0.1 50 100 150 200 REVERSE VOLTAGE : VR (V) REVERSE CURRENT : IR (nA) 125°C 75°C 25°C −25°C 0 0 2.0 0.8 1.0 1.2 1.4 1.6 1.8 0.6 0.4 0.2 25 75 125 50 100 150 AVERAGE RECTIFIED CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (°C) Fig.3 Derating curve DC D=1/2 Sin(θ=180) T t IO 0A 0V VR D=t / T VR=200V Tj=150°C 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD POWER DISSIPATION : PF (W) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig. 4 Power dissipation characteristics DC D=1/2 Sin(θ=180) 0 20 25 15 10 5 1 10 100 CYCLE SURGE FORWARD CURRENT : IFSM (A) Fig.5 Forward peak surge current 8.3ms 8.3ms 1cycle sin wave IFSM 0 5 10 15 20 25 30 100 10 0 CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig. 6 Capacitance between terminals characteristics 0 0 6 8 10 12 14 16 18 20 0.25 0.5 0.75 1 1.5 1.25 FORWARD CURRENT : IF(A) RECOVERY TIMES: trr (ns) Fig. 7 Reverse recovery time IR=1.0A Irr=0.25 IR +