Preface some Matlab problems make use of a basic numerical, finite-difference technique in which the "exact" numerical solution to an equation is compared to a more approximate analytical solution such as the solution of the Poisson equation using the depletion approximation Chapters 1 to 3 introduce the notion of energy bands, carrier transport and generation-recombination phenomena in a semiconductor. End-of- hapter problems are used here to illustrate and visualize quantum mechanical effects, energy band structure, electron and hole behavior, and the response of carriers to an electric field Chapters 4 and 5 derive the electrical characteristics of PN and metal semiconductor contacts. The notion of a space-charge region is introduced and carrier transport in these structures is analyzed. Special applications such as solar cells are discussed. Matlab problems are used to visualize charge and potential distributions as well as current components In Junctions Chapter 6 analyzes the JFET and the MEsFet, which are extensions the pn or metal-semiconductor junctions. The notions of source, gate, drain and channel are introduced. together with two-dimensional field effects such as pinch-off. These important concepts lead the reader up to the MosFet chapter Chapter 7 is dedicated to the MOSFET. In this important chapter the MOs capacitor is analyzed and emphasis is placed on the physical mechanisms taking place. The current expressions are derived for the MOS transistor. including second-order effects such as surface channel mobility reduction, channel length modulation and threshold voltage roll- off. Scaling rules are introduced, and hot-carrier degradation effects are discussed. Special MOSFET structures such as non-volatile memory and silicon-on-insulator devices are described as well. Matlab problems are used to visualize the characteristics of the Mos capacitor, to compare different MOSFET models and to construct simple circuits Chapter 8 introduces the bipolar junction transistor(BJT). The Ebers- Moll, Gummel-Poon and charge-control models are developed and second-order effects such as the Early and Kirk effects are described Matlab problems are used to visualize the currents in the bjt. Heterojunctions are introduced in Chapter 9 and several heterojunction devices, such as the high-electron mobility transistorxii Preface some Matlab problems make use of a basic numerical, finite-difference technique in which the "exact" numerical solution to an equation is compared to a more approximate, analytical solution such as the solution of the Poisson equation using the depletion approximation. Chapters 1 to 3 introduce the notion of energy bands, carrier transport and generation-recombination phenomena in a semiconductor. End-of￾chapter problems are used here to illustrate and visualize quantum mechanical effects, energy band structure, electron and hole behavior, and the response of carriers to an electric field. Chapters 4 and 5 derive the electrical characteristics of PN and metal￾semiconductor contacts. The notion of a space-charge region is introduced and carrier transport in these structures is analyzed. Special applications such as solar cells are discussed. Matlab problems are used to visualize charge and potential distributions as well as current components in junctions. Chapter 6 analyzes the JFET and the MESFET, which are extensions of the PN or metal-semiconductor junctions. The notions of source, gate, drain and channel are introduced, together with two-dimensional field effects such as pinch-off. These important concepts lead the Reader up to the MOSFET chapter. Chapter 7 is dedicated to the MOSFET. In this important chapter the MOS capacitor is analyzed and emphasis is placed on the physical mechanisms taking place. The current expressions are derived for the MOS transistor, including second-order effects such as surface channel mobility reduction, channel length modulation and threshold voltage roll￾off. Scaling rules are introduced, and hot-carrier degradation effects are discussed. Special MOSFET structures such as non-volatile memory and silicon-on-insulator devices are described as well. Matlab problems are used to visualize the characteristics of the MOS capacitor, to compare different MOSFET models and to construct simple circuits. Chapter 8 introduces the bipolar junction transistor (BJT). The Ebers￾Moll, Gummel-Poon and charge-control models are developed and second-order effects such as the Early and Kirk effects are described. Matlab problems are used to visualize the currents in the BJT. Heterojunctions are introduced in Chapter 9 and several heterojunction devices, such as the high-electron mobility transistor