ace XIlI (HEMT), the heterojunction bipolar transistor (HBT), and the laser diode are analyzed Chapter 10 is dedicated to the most recent semiconductor devices After introducing the tunnel effect and the tunnel diode, the physics of low-dimensional devices(two-dimensional electron gas, quantum wire and quantum dot) is analyzed. The characteristics of the single-electron transistor are derived. Matlab problems are used to visualize tunneling through a potential barrier and to plot the density of states in lov dimensional devices Chapter ll introduces silicon processing techniques such as oxidation, ion implantation, lithography, etching and silicide formation. CMOS and BJT fabrication processes are also described step by step. Matlab problems analyze the influence of ion implantation and diffusion parameters on MOS capacitors, MOSFETS, and BJTs The solutions to the end-of-chapter problems available to Instructors to download a solution manual and Matlab files corresponding to the end-of-chapter problems, please go to the following Url:http://www.wkap.nl/prod/b/1-4020-7018-7 This book is dedicated to Gunner. David. Colin-Pierre. Peter. Eliott and michael. The late Professor f. van de wiele is acknowledged for his help reviewing this book and his mentorship in Semiconductor Device hysics Cynthia A. Colinge Jean-Pierre Colinge California State University University of californioPreface xiii (HEMT), the heterojunction bipolar transistor (HBT), and the laser diode, are analyzed. Chapter 10 is dedicated to the most recent semiconductor devices. After introducing the tunnel effect and the tunnel diode, the physics of low-dimensional devices (two-dimensional electron gas, quantum wire and quantum dot) is analyzed. The characteristics of the single-electron transistor are derived. Matlab problems are used to visualize tunneling through a potential barrier and to plot the density of states in low￾dimensional devices. Chapter 11 introduces silicon processing techniques such as oxidation, ion implantation, lithography, etching and silicide formation. CMOS and BJT fabrication processes are also described step by step. Matlab problems analyze the influence of ion implantation and diffusion parameters on MOS capacitors, MOSFETs, and BJTs. The solutions to the end-of-chapter problems are available to Instructors. To download a solution manual and the Matlab files corresponding to the end-of-chapter problems, please go to the following URL: http://www.wkap.nl/prod/b/1-4020-7018-7 This Book is dedicated to Gunner, David, Colin-Pierre, Peter, Eliott and Michael. The late Professor F. Van de Wiele is acknowledged for his help reviewing this book and his mentorship in Semiconductor Device Physics. Cynthia A. Colinge California State University Jean-Pierre Colinge University of California