E.I. Girargizov et al/Ultramicroscopy 82(2000)57-61 silicon etching [9], to polish chemically the back Acknowledgements side of the cantilever that is important for precise measurements of the AFM signal. In other words The authors thank Dr V.G. Galstyan and Mrs the cantilevers have advantages in comparison with V.I. Muratova for scanning electron micrograph the standard silicon AFM cantilevers that are usu- studies, Ms. S.V. Nosovich for sharpening of the An additional advantage of the whisker probe ally oriented along the (100)crystallographic fac whiskers, and Mrs O B. Vol'skaya for assistance in preparation of photographs the fact that the(111)-cantilevers have approxim ately 30% higher coefficient of piezoresistivity in comparison with the(1 0 0j-cantilevers of a similar References design [7] It is a non-standard task to prepare (1 1 1)- []RS. w.C. Ellis, Appl. Phys. Lett. 4(1964)89. oriented cantilevers by, for example, anisotropic [3]EI J. Vac. Sci. Technol. B 11(1993)449. A N. Kiselev, L N. Obolenskaya, A.N. hemical etching [9]. One of the possible solution of Stepanova, Appl. Surf. Sci. 67(1993)73 the problem is to use special dry etching procedure [4] K.L. Lee, D W. Abraham, F Secord, L. Landstein, J. Vac at cryogenic temperatures for deep etching [10, 11 B9(1991)3562 In Fig 9, an example of the AFM whisker probe [5]JE. D.A. Grigg, J Appl. Phys. 74(1993)R83. fabricated with our technology is given. [6]JA. Dagata. i J.J. Kopansky, Solid State TechnoL. 7(1995 [7 I.W. Rangelow, F Shi, P Hudek, P Grabiec, B Volland 4. Conclusions E.I. Givargizov, A N. Stepanova, L.N. Obolenskaya, ES Maskova, V.A. Molchanov, J. Vac. Sci. Technol. B 16 (1998)3185 a new technology based on whisker growth is [8]AN. Stepanova, E.L. Givargizov, L.V. Bormatova, VV proposed for preparation of AFM probes. The Zhirnov. E.S. Mashkova. V.A. Molchanov. J. Vac. Sc technology posseses significant advantages to the Technol. B 16(1998)678. whisker probes over standard ones as related to the [g k. etersen Prop, IEEE 70(1982)420 shapes of the probes, as well as to the properties of [11] I.W. Rangelow, Deep Etching of Silicon, ISBN 83-7085. the cantilevers on which the whiskers are grown 254-8,1996,120pp.silicon etching [9], to polish chemically the back￾side of the cantilever that is important for precise measurements of the AFM signal. In other words, the cantilevers have advantages in comparison with the standard silicon AFM cantilevers that are usu￾ally oriented along the (1 0 0) crystallographic face. An additional advantage of the whisker probes is the fact that the (111)-cantilevers have approxim￾ately 30% higher coe$cient of piezoresistivity in comparison with the (1 0 0)-cantilevers of a similar design [7]. It is a non-standard task to prepare (1 1 1)- oriented cantilevers by, for example, anisotropic chemical etching [9]. One of the possible solution of the problem is to use special dry etching procedure at cryogenic temperatures for deep etching [10,11]. In Fig. 9, an example of the AFM whisker probe fabricated with our technology is given. 4. Conclusions A new technology based on whisker growth is proposed for preparation of AFM probes. The technology posseses signi"cant advantages to the whisker probes over standard ones as related to the shapes of the probes, as well as to the properties of the cantilevers on which the whiskers are grown. Acknowledgements The authors thank Dr. V.G. Galstyan and Mrs. V.I. Muratova for scanning electron micrograph studies, Ms. S.V. Nosovich for sharpening of the whiskers, and Mrs. O.B. Vol'skaya for assistance in preparation of photographs. References [1] R.S. Wagner, W.C. Ellis, Appl. Phys. Lett. 4 (1964) 89. [2] E.I. Givargizov, J. Vac. Sci. Technol. B 11 (1993) 449. [3] E.I. Givargizov, A.N. Kiselev, L.N. Obolenskaya, A.N. Stepanova, Appl. Surf. Sci. 67 (1993) 73. [4] K.L. Lee, D.W. Abraham, F. Secord, L. Landstein, J. Vac. Sci. Technol. B 9 (1991) 3562. [5] J.E. Gri$th, D.A. Grigg, J. Appl. Phys. 74 (1993) R83. [6] J.A. Dagata, J.J. Kopansky, Solid State Technol. 7 (1995) 91. [7] I.W. Rangelow, F. Shi, P. Hudek, P. Grabiec, B. Volland, E.I. Givargizov, A.N. Stepanova, L.N. Obolenskaya, E.S. Maskova, V.A. Molchanov, J. Vac. Sci. Technol. B 16 (1998) 3185. [8] A.N. Stepanova, E.I. Givargizov, L.V. Bormatova, V.V. Zhirnov, E.S. Mashkova, V.A. Molchanov, J. Vac. Sci. Technol. B 16 (1998) 678. [9] K. Petersen, Proc. IEEE 70 (1982) 420. [10] I.W. Rangelow, Plasma Surf. Eng. 12 (1997) 234. [11] I.W. Rangelow, Deep Etching of Silicon, ISBN 83-7085- 254-8, 1996, 120 pp. E.I. Givargizov et al. / Ultramicroscopy 82 (2000) 57}61 61