E.I. Girargizov et al/Ultramicroscopy 82(2000)57-61 016828KV818,8881m 11272K81,89919NmMD39 855328K18,981mWD28 Fig. 7(a) expansion/contraction on silicon whiskers during their growth; (b) a silicon probe prepared by a sharpening of IR9728198kVX19m a whisker and its treatment in an anistropic etch. a high resolving power of the probe. Figs 6a and b demonstrate a realization of such probes In addition, a cylindrical shape of the upper part probe by crystalline diamond and, then, a sharp- llows to use such probes for trench profiling [4], ening of the coating by ion milling [8]. The result is for fine studies of biological objects and for other shown in Fig 8. Such probes characterized by ex- dimensional measurements of topographic features reme hardness, chemical inertness, very low of irregular surfaces [5,6]. By changing of growth tion coefficient, etc, are especially suitable for parameters during whisker formation it is possible contact-mode AFM applications. to expand and, then, contract the diameter of the One more remark on whisker probes. The probes whiskers(Fig. 7a)and, in such a way, to form are formed on (111)-Si cantilevers because the probes having sharp edges not only on their top but whiskers grow according to the vapor-liquid-solid also on side faces(Fig. 7b)applicable to profiling mechanism preferentially in the [11 1] crystallo- structures having sloped walls [7] graphic direction. At the same time, owing to the One more possibility that relates to crystal exceptional features of the close-packed ori growth technology is a coating of the end of the entation, it is possible, by using the anisotropicFig. 7. (a) expansion/contraction on silicon whiskers during their growth; (b) a silicon probe prepared by a sharpening of a whisker and its treatment in an anistropic etch. Fig. 8. A diamond tip on a silicon basis prepared by ion-beam sharpening. Fig. 9. An example of a whisker probe epitaxial to a silicon cantilever. a high resolving power of the probe. Figs. 6a and b demonstrate a realization of such probes. In addition, a cylindrical shape of the upper part allows to use such probes for trench pro"ling [4], for "ne studies of biological objects and for other dimensional measurements of topographic features of irregular surfaces [5,6]. By changing of growth parameters during whisker formation it is possible to expand and, then, contract the diameter of the whiskers (Fig. 7a) and, in such a way, to form probes having sharp edges not only on their top but also on side faces (Fig. 7b) applicable to pro"ling structures having sloped walls [7]. One more possibility that relates to crystal growth technology is a coating of the end of the probe by crystalline diamond and, then, a sharp￾ening of the coating by ion milling [8]. The result is shown in Fig. 8. Such probes characterized by ex￾treme hardness, chemical inertness, very low fric￾tion coe$cient, etc., are especially suitable for contact-mode AFM applications. One more remark on whisker probes. The probes are formed on (1 1 1)-Si cantilevers because the whiskers grow according to the vapor}liquid}solid mechanism preferentially in the [1 1 1] crystallo￾graphic direction. At the same time, owing to the exceptional features of the close-packed ori￾entation, it is possible, by using the anisotropic 60 E.I. Givargizov et al. / Ultramicroscopy 82 (2000) 57}61