第2期 姜春华等：Ga-xZn:NO光催化剂粉体的制备及其表征 .141. 阳光利用率是十分有利的， Eng-2005,34(5):1411 [4]Huang H Y.Lin W C.Lee W H.et al.Isoelectronic As doping 3 结论 effects on the optical characteristics of GaN films grown by met- alorganic chemical vapor deposition.Appl Phys Lett.2000.77: 用高温固相反应方法成功制备了Ga1-xZnxN0 2819 粉末样品，通过控制实验条件可以改变样品 [5]Nakamura S.Mukai T,Senoh M.Candela class high-brightness Ga1-Zn:N0中Ga和Zn的含量.随着Zn和0浓 InGaN/AIGaN double-heterostructureblue-light-emitting diodes. 度增加，XRD的衍射峰值位置整体移向更小的角度 Appl Phys Lett.1994.64:1687 [6]Nakamura S.The Roles of structural imperfections in InGaN- (2)处，样品的a和c值都比纯的氨化镓的a和c Based blue light-emitting diodes and laser diodes.Science.1998. 值大，并且随着Zn的浓度增加，样品的a和c值均 281:956 呈增加趋势，同时样品的吸收波长向长波方向移 [7]Fu Y.Sun Y P,Shen X M.et al.Growth of cubic GaN by 动，更有利于可见光的吸收，实验表明所获的 MOCVD at high temperature.Chin J Semicond.2002.23(2): Ga1-Zn:N0仍然呈六角纤锌矿结构. 120 [8]Maeda K.Takata T.Hara M.et al.GaN iZnO solid solution as a 参考文献 photocatalyst for visible-light-driven overall water splitting.JAm Chem Soc,2005,127:8286 [1]Fujishima A.Honda K.Electrochemical photolysis of water at a [9]Yashima M,Maeda K.Teramura K.et al.Crystal structure and semiconductor electrode.Nature,1972.238,37 optical properities of (Ga-Zn,)(N-0)oxynitride photocat- [2]Yang Q K.LiAZ.Zhang Y G.et al.Growth and mosaic model alyst (x=0.13).Chem Phys Lett.2005,416:225 of GaN grown direetly on 6H-SiC(0001)by direct current plasma [10]Yashima M,Macda K,Teramura K.et al.Crystal structure assisted molecular beam epitaxy.JCryst Growth.1998.192:28 analysis of (Gao.3Zno.7)(No.9000.0)oxynitride Photocatalyst [3]Xiao H D.Ma HL.Xue CS,et al.Study on synthesis of grainy Mater Trans,2006,47(2):295 GaN powders and their structural properties.Rare Met Mater Preparation and characterization of Ga-xZnxNO photocatalyst powders JA NG Chunhua,ZHENG Yuhong,YANG Weiguang,WAN Farong2) 1)Materials Science and Engineering School.University of Science and Technology Beijing.Beijing 100083.China 2)Beijing Key Lab of Advanced Energy Material and Technology.University of Science and Technology Beijing.Beijing 100083.China ABSTRACI The band gap of GaN can be changed by substituting some Ga and N atoms by Zn and O atoms in order to improve its quantum efficiencies.Under NH3 gas flow,the mixture of Ga2O3 and ZnO was calcined at 1123K for 900min.Gai-Zn,NO yellow powders were prepared by the gas solid phase synthesis method.The influence of different synthesis process on the physical properties of the samples was investigated.The crystal structure and optical properties of Gai-xZn,NO were characterized by XRD,TEM,UV-Vis measurements. The results indicate that the synthesized Gai-Zn,NO is hexagonl wurtzite structure and has absorption peak around a wavelength of 400~450nm. KEY WORDS crystallite;Gai-Zn,NO;photocatalyst;crystal structure;optical properties阳光利用率是十分有利的． 3 结论 用高温固相反应方法成功制备了Ga1－ xZnxNO 粉末 样 品‚通 过 控 制 实 验 条 件 可 以 改 变 样 品 Ga1－ xZnxNO 中 Ga和 Zn 的含量．随着 Zn 和 O 浓 度增加‚XRD 的衍射峰值位置整体移向更小的角度 （2θ）处‚样品的 a 和 c 值都比纯的氮化镓的 a 和 c 值大‚并且随着 Zn 的浓度增加‚样品的 a 和 c 值均 呈增加趋势．同时样品的吸收波长向长波方向移 动‚更 有 利 于 可 见 光 的 吸 收．实 验 表 明 所 获 的 Ga1－ xZnxNO 仍然呈六角纤锌矿结构． 参 考 文 献 ［1］ Fujishima A‚Honda K．Electrochemical photolysis of water at a semiconductor electrode．Nature‚1972‚238：37 ［2］ Yang Q K‚Li A Z‚Zhang Y G‚et al．Growth and mosaic model of GaN grown directly on6H－SiC（0001） by direct current plasma assisted molecular beam epitaxy．J Cryst Growth‚1998‚192：28 ［3］ Xiao H D‚Ma H L‚Xue C S‚et al．Study on synthesis of grainy GaN powders and their structural properties．Rare Met Mater Eng‚2005‚34（5）：1411 ［4］ Huang H Y‚Lin W C‚Lee W H‚et al．Isoelectronic As doping effects on the optical characteristics of GaN films grown by met￾alorganic chemica-l vapor deposition．Appl Phys Lett‚2000‚77： 2819 ［5］ Nakamura S‚Mukai T‚Senoh M．Candela-class high-brightness InGaN／AIGaN double-heterostructureblue-light-emitting diodes． Appl Phys Lett‚1994‚64：1687 ［6］ Nakamura S．The Roles of structural imperfections in InGaN－ Based blue light-emitting diodes and laser diodes．Science‚1998‚ 281：956 ［7］ Fu Y‚Sun Y P‚Shen X M‚et al．Growth of cubic GaN by MOCVD at high temperature．Chin J Semicond‚2002‚23（2）： 120 ［8］ Maeda K‚Takata T‚Hara M‚et al．GaN∶ZnO solid solution as a photocatalyst for visible-light-driven overall water splitting．J Am Chem Soc‚2005‚127：8286 ［9］ Yashima M‚Maeda K‚Teramura K‚et al．Crystal structure and optical properities of （Ga1－ xZn x）（N1－ xO x） oxynitride photocat￾alyst （ x＝0∙13）．Chem Phys Lett‚2005‚416：225 ［10］ Yashima M‚Maeda K‚Teramura K‚et al．Crystal structure analysis of （Ga0∙93Zn0∙07）（N0∙90O0∙10） oxynitride Photocatalyst． Mater Trans‚2006‚47（2）：295 Preparation and characterization of Ga1－ xZn xNO photocatalyst powders JIA NG Chunhua 1）‚ZHENG Y uhong 1）‚Y A NG Weiguang 1）‚WA N Farong 1‚2） 1） Materials Science and Engineering School‚University of Science and Technology Beijing‚Beijing100083‚China 2） Beijing Key Lab of Advanced Energy Material and Technology‚University of Science and Technology Beijing‚Beijing100083‚China ABSTRACT The band gap of GaN can be changed by substituting some Ga and N atoms by Zn and O atoms in order to improve its quantum efficiencies．Under NH3gas flow‚the mixture of Ga2O3and ZnO was calcined at 1123K for900min．Ga1－ xZnxNO yellow powders were prepared by the gas solid phase synthesis method．The influence of different synthesis process on the physical properties of the samples was investigated．The crystal structure and optical properties of Ga1－ xZnxNO were characterized by XRD‚TEM‚UV－Vis measurements． The results indicate that the synthesized Ga1－ xZnxNO is hexagonl wurtzite structure and has absorption peak around a wavelength of 400～450nm． KEY WORDS crystallite；Ga1－ xZnxNO；photocatalyst；crystal structure；optical properties 第2期 姜春华等： Ga1－xZnxNO 光催化剂粉体的制备及其表征 ·141·