MP02XXX190 Series EUrex SEMICONDUCTOR c重田 12t=kxt Hl T;=125℃ 15 H十 与6g四056g西3g0@50 50甘 十口士 101234510203050 .5 Instantaneous on-state voltage, VI-V) Cycles at 50Hz Fig 3 Maximum(limit)on-state characteristics Fig. 4 Surge(non-repetitive )on-state current vs time (Thyristor or diode with 50%Voom at T.=125c) 0.3 HH址 02 0 Region of certain triggering 0.1 0.001 0.010 0.100 Gate trigger current, IGT(A) Time-(s Fig 5 Gate characteristics g 6 Transient thermal impedance-dc ww. done .Co4/8 www.dynexsemi.com MP02XXX190 Series 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 Instantaneous on-state current, IT - (A) Measured under pulse conditions Tj = 125˚C Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125˚C) Fig. 5 Gate characteristics 0.001 0.010 0.100 1.0 10 100 Time - (s) 0 0.1 0.2 0.3 Thermal impedance - (˚C/W) Rth(j-hs) Rth(j-c) 0.001 0.01 0.1 1 10 Gate trigger current, IGT - (A) 100 10 1 0.1 Gate trigger voltage, VGT - (V) 100W 50W 10W 20W 5W Region of certain triggering Upper limit 95% Lower limit 5% Tj = 125˚C Tj = 25˚C Tj = -40˚C VGD IFGM 20 15 10 5 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 45 50 ms Cycles at 50Hz Duration 50 100 I2t value - (A2s x 103) I2t I 2t = Î2 x t 2 150 10 20 30