Eex MP02XXX190 Series DYNAMIC CHARACTERISTICS- THYRISTOR Symbol Parameter Test Conditions Min. Max.Units Peak reverse and off-state current At VRRNVDRM, T=125C V/dt Linear rate of rise of off-state voltage To 67%Vpu, T, =125C I 1000 Vus dI/dt Rate of rise of on-state current From 67%VoRy to 400A, Repetitive 50Hz 500Aus Gate source 20V. 20Q t =0.5us, T,=125C Threshold voltage AtT.=125°C. See note1 0.88V On-state slope resistance AtT= 125 C. See note 1 Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. U Gate trigger voltage Vm=5V,T=25°C 30V IGT Gate trigger current v=5V.T=25°C Gate non-trigger voltage AtVT=125°C 025V Peak forward gate voltage Anode positive with respect to cathode Peak forward gate voltage Anode negative with respect to cathode 025V Peak reverse gate voltage Peak forward gate current Anode positive with respect to cathode 10 Peak gate powe See table fig 5 P Mean gate power 5 3/8 www.dynexsemi.com3/8 www.dynexsemi.com MP02XXX190 Series Units mA V/µs A/µs V mΩ Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 400A, Repetitive 50Hz Gate source 20V, 20Ω, t r = 0.5µs, Tj = 125˚C At Tvj = 125˚C. See note 1 At Tvj = 125˚C. See note 1 Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Threshold voltage On-state slope resistance DYNAMIC CHARACTERISTICS - THYRISTOR Symbol I RRM/IDRM dV/dt dI/dt VT(TO) rT Max. 30 1000 500 0.88 0.7 Min. - - - - - Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25o C VDRM = 5V, Tcase = 25o C At VDRM, Tcase = 125o C Anode positive with respect to cathode Anode negative with respect to cathode - Anode positive with respect to cathode See table fig. 5 - Symbol VGT I GT VGD VFGM VFGN VRGM I FGM PGM PG(AV) GATE TRIGGER CHARACTERISTICS AND RATINGS Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W