摘要 摘要 本文阐述了Banba和Leung两种基本带隙基准电压源电路的工作原理，分析了Leung 结构对于Banba结构改进的方法，分别对两个电路的参数进行了设计，并仿真其性能，由 此来比较了它们各自的特点。得到的结论是Banba结构的输出电压温度系数更小，而Leung 结构的最低电源电压可以降到IV左右，有益于向低电压设计的发展。仿真采用SMIC 0.l8um标准CMOS Spice工艺模型在Hspice中进行，两者的输出电压都在0.5V左右，温 度系数在105数量级，成品受到其他非理想因素的影响，温度系数会大一点。由于时间 和设备有限，暂时无法实现成成品，所以目前所有指标都是仿真理想值。 关键词—能隙源，低电压，温度无关 ABSTRACT Two bandgap circuits-a Banba one and a Leung one are presented in this work.It also includes the analysis of their working principles and the design of the perimeters,the simulation of their functions.At last,it compares their differences.The former one bears less temperature dependence and the later can lower the minimum supply voltage to about 1V,which could be used for low voltage design.This work is simulated by Hspice with the SMIC 0.18um technology.Both of the reference voltages generated are about 0.5V.Their temperature coefficient is about 10e-5,but the product after manufacture may be influenced by other imperfect aspects.Since the limits of time and devices,I have only got the last product of these circuits,so the results printed are all simulation results. Index Terms-Bandgap reference,low voltage,temperature independent摘要 摘要 本文阐述了 Banba 和 Leung 两种基本带隙基准电压源电路的工作原理，分析了 Leung 结构对于 Banba 结构改进的方法，分别对两个电路的参数进行了设计，并仿真其性能，由 此来比较了它们各自的特点。得到的结论是 Banba 结构的输出电压温度系数更小，而 Leung 结构的最低电源电压可以降到 1V 左右，有益于向低电压设计的发展。仿真采用 SMIC 0.18um 标准 CMOS Spice 工艺模型在 Hspice 中进行，两者的输出电压都在 0.5V 左右，温 度系数在 10e-5 数量级，成品受到其他非理想因素的影响，温度系数会大一点。由于时间 和设备有限，暂时无法实现成成品，所以目前所有指标都是仿真理想值。 关键词——能隙源，低电压，温度无关 ABSTRACT Two bandgap circuits – a Banba one and a Leung one are presented in this work. It also includes the analysis of their working principles and the design of the perimeters, the simulation of their functions. At last, it compares their differences. The former one bears less temperature dependence and the later can lower the minimum supply voltage to about 1V, which could be used for low voltage design. This work is simulated by Hspice with the SMIC 0.18um technology. Both of the reference voltages generated are about 0.5V. Their temperature coefficient is about 10e-5, but the product after manufacture may be influenced by other imperfect aspects. Since the limits of time and devices, I have only got the last product of these circuits, so the results printed are all simulation results. Index Terms——Bandgap reference, low voltage, temperature independent