Stopping power in lon Implantation Most damage is done by nuclear interactions About 15 ev needed to displace si from lattice site create vacancy/interstitial pair(Frankel defect) Viscosity, Transitions Nuclear non-local Coulomb electrons electrons collisions velocity R ore eiec at smaller y substrate Most damage occurs near limit ofr 3.155J/6.152J.2003t Stopping power in Ion Implantation Most damage is done by nuclear interactions About 15 eV needed to displace Si from lattice site, create vacancy/interstitial pair (Frankel defect) Viscosity, Transitions, Nuclear non-local local Coulomb electrons electrons collisions R substrate velocity More effective at smaller vion More effective at larger vion Rp. M il t ff i at larger v More ion effective at larger vion at larger M iore effecti e More effective More effective ff t ll Most damage occurs near limit of More effecti More effecti e at More effective More effective at larger ff ti t l e a arger More effecti More effective ff ti ll p 3.155J/6.152J, 2003 13