5SHX26L4503 Diode part lF [A Irr [A] 3500 950日d=50As 3000 Vn=2700V 750 500H ■■■■■■■■ VEM Fig 4 Diode on-state characteristics Fig 5 Diode reverse recovery current Vs turn -off current Err [J] la四A 3500 40日=50As 日v。=2700V 3000 3.5 dip/dt=550 A/us H+ 2500 HVoMs VI 2000 ■■■■■■■■■■■■■■■■■ ■■■■■■■■ 5001000150020002500 2000 30004000 Vo M Fig 6 Diode turn-off energy per pulse vs Fig. 7 Max repetitive diode forward turn -off current current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 6 of 95SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 6 of 9 Diode Part 3456789 VF [V] 0 500 1000 1500 2000 2500 3000 3500 I F [A] Tj = 115°C 0 500 1000 1500 2000 2500 500 550 600 650 700 750 800 850 900 950 1000 Tj = 115°C diF/dt = 550 A/µs VD = 2700 V I FQ [A] Irr [A] Fig. 4 Diode on-state characteristics. Fig. 5 Diode reverse recovery current vs. turn-off current. 0 500 1000 1500 2000 2500 I FQ [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Err [J] Tj = 115°C diF/dt = 550 A/µs VD = 2700 V 0 1000 2000 3000 4000 VD [V] 0 500 1000 1500 2000 2500 3000 3500 I FQ [A] Tj = 0 - 115°C diF/dt = 550 A/µs VDM ≤ VDRM Fig. 6 Diode turn-off energy per pulse vs. turn-off current. Fig. 7 Max. repetitive diode forward current