A B B n=in air Ac)The minimum resolution R 1. 22-1.22y061061> where d n(2f sina) nina NA f is the focal length(which may not be the same as the distance to the imaging plane and d is the diameter of the lens. You might also include the fudge factor, ki, in the final form of R, to account for the departure of a real lens from ideality d)Why would this resolution limit improve if the optical projection could be done in an oil medium. Use the Rayleigh criterion equations to explain this. [21 A. d)According to Rayleigh criterion, the resolution limit will improve(smaller R)in a high reflective index(n>1) medium, for example, oil e)How does phase-shift lithography improve the limit of resolving two features close proximity? 3] A, e) The figure below shows how phase-shift lithography improves the resolution limit in close proximity. The left side shows that the light intensity, I=lamplitudel-, in the gion between two exposure features will be enhanced by addition of the amplitudes of the two features point-by-point. The photo resist corresponding to this region will also be exposed and poorly resolved. The right hand side uses a phase-shift lens to shift the phase of one feature by exactly 180. The amplitudes cancel in the overlap region, reducing the intensity of light between the neighboring features and greatly improve the resolution of the resulting pattern on the photo resist. 66 A. c) The minimum resolution n f n NA f d f R l a l a l l 0.61 sin 0.61 (2 sin ) 1.22 1.22 = = = = where f is the focal length (which may not be the same as the distance to the imaging plane) and d is the diameter of the lens. You might also include the fudge factor, k1, in the final form of R, to account for the departure of a real lens from ideality. d) Why would this resolution limit improve if the optical projection could be done in an oil medium. Use the Rayleigh criterion equations to explain this. [2]. A. d) According to Rayleigh criterion, the resolution limit will improve (smaller R) in a high reflective index ( n > 1) medium, for example, oil. e) How does phase-shift lithography improve the limit of resolving two features in close proximity? [3] A, e) The figure below shows how phase-shift lithography improves the resolution limit in close proximity. The left side shows that the light intensity, I = |amplitude|2 , in the region between two exposure features will be enhanced by addition of the amplitudes of the two features point-by-point. The photo resist corresponding to this region will also be exposed and poorly resolved. The right hand side uses a phase-shift lens to shift the phase of one feature by exactly 180o . The amplitudes cancel in the overlap region, reducing the intensity of light between the neighboring features and greatly improve the resolutioin of the resulting pattern on the photo resist. a f A B B’ A’ d R n =1 in air