graphy 5. a)Sketch the intensity profile incident on a substrate for exposure of a small circular feature through a projection lithography system and a contact/proximity lithography system. In the case of the projection system, quantitatively label the A. a) ty Lithography Projection Litho 122Mf d is the le diamete Contact Incident Lithography Light Intensity b) Explain in words how the Rayleigh criterion for a diffraction limited system is mathematically determined. [4] a b) Rayleigh criterion defines the resolving power of an optic lens, i.e. the size of the minimum resolvable feature Two adjacent points are distinguishable when one point projection's peak lies on the other point's first minimum. c) Derive the Rayleigh criterion in terms of numerical aperture, NA, and a, using the expressions; R=1.22/fld and NA= nsina. Define fand d. [615 Lithography 5. a) Sketch the intensity profile incident on a substrate for exposure of a small circular feature through a projection lithography system and a contact/proximity lithography system. In the case of the projection system, quantitatively label the horizontal axis. [5] A. a) b) Explain in words how the Rayleigh criterion for a diffraction limited system is mathematically determined. [4] A b) Rayleigh criterion defines the resolving power of an optic lens, i.e. the size of the minimum resolvable feature. Two adjacent points are distinguishable when one point projection’s peak lies on the other point’s first minimum. c) Derive the Rayleigh criterion in terms of numerical aperture, NA, and l, using the expressions; R = 1.22lf/d and NA = nsina. Define f and d. [6] W Incident Light Projection Lithography d 1.22lf d is the lens diameter Circular Aperture Light Intensity Proximity Lithography Contact Lithography