3期王渭源:用阶跃恢复法测定砷化镓结型(P-n和M-s结)两极管的载流子寿命349 MEASUREMeNt OF CARRIER LIFE TIME OF GaAs DIODES WITH P-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD WANG WEI-YUAN Shanghai Institute of Metallurgy, Academia Sinica) ABSTRACT This paper presents some preliminary results on the measurement of carrier life. time of Gaas diodes by the step recovery method. The lifetime of Si recovery diodes with Boron diffused p-n junction has been measured by the reverse recovery and step ly consistent, indicating that it meets the requireme of the step recovery method sufficiently well. Therefore, it is suggested tha diode lifetim btained is equal to the minority carrier lifetime of GaAs diodes with p-n junction has been determined. The lifetime of GaAs diodes with M-S schottry barrier has also been measured. In this suggested from a prelim not the minority carrier lifetir