@ ENEx DCR1473SYDCR1473sV SURGE RATINGS Symbol Parameter Conditions Max. Uni Surge(non-repetitive)on-state current 10ms half sine: T.= 125C 51.0 ?t It for fusing V=50%V-1/4 sine 131x106A2s Surge(non-repetitive)on-state current 10ms half sine: T 64.0 KA Pt Pt for fusing V=0 2048×10°A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Unit Double side cooled 00095°W Thermal resistance- junction to case Anode dc 0.019°W Single side cooled Cathode dc Double sid Thermal resistance. case to heatsink Clamping force 43.0kN 0002 with mounting compound Single side On-state(conducting) 1359C T Virtual junction temperature Reverse(blocking) 125 Storage temperature range 55125°c Clamping force 380470kN www.dynexsemi.comDCR1473SY / DCR1473SV 3/9 www.dynexsemi.com SURGE RATINGS Conditions 10ms half sine; Tcase = 125o C VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125o C VR = 0 Symbol Parameter Max. Units I TSM Surge (non-repetitive) on-state current I 2 t I2 t for fusing I TSM Surge (non-repetitive) on-state current I 2 t I 2 t for fusing 20.48 x 106 A2 s 64.0 kA 13.1x 106 A2 s 51.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units o Anode dc - 0.019 C/W Clamping force 43.0kN with mounting compound R Thermal resistance - case to heatsink th(c-h) Double side - 0.002 125 o C Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side - R Thermal resistance - junction to case th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN -55 125 o C - On-state (conducting) - 135 o C - 0.004 o C/W o C/W Cathode dc - - o C/W Double side cooled - 0.0095 o C/W