5sHX10H6004 GCT Part Eoft [] T=11 2.0 1.0 0100200300400500600700800900 g GCT on-state characteristics g GCT turn-off energy per pulse vs turn-off current 11.5μH R=125 2000 300040005000 Vo M Max repetitive gCt turn-off current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 5 of 95SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 5 of 9 GCT Part 0 200 400 600 800 1000 1.5 2.0 2.5 3.0 3.5 4.0 VT [V] IT [A] Tj = 115°C 0 100 200 300 400 500 600 700 800 900 1000 I TGQ [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Eoff [J] Tj = 115°C VD = 3300 V Fig. 1 GCT on-state characteristics. Fig. 2 GCT turn-off energy per pulse vs. turn-off current. 0 100 200 300 400 500 600 700 800 900 1000 0 1000 2000 3000 4000 5000 VD [V] ITGQ [A] Tj = 0..115 °C VDM ≤ VDRM Li = 11.5 µH CCL = 2.0 µF LCL = 0.6 µH Rs = 1.25 Ω Fig. 3 Max. repetitive GCT turn-off current