基于电导的 A>E 神经元模型 Threshold 1m-V)+C+∑/+∑ Synapse Resting potential Undershoot Stimulus Ions =Gma m'n(v-viond) Schematic"Action Potential SYnapse G synapse 泄漏电流,电容电流 离子电流,突触电流 8=oE2 跨膜电流,轴向传递 Resting Potential Time (ms) Real "Action Potential基于电导的 神经元模型 • 泄漏电流，电容电流 • 离子电流，突触电流 • 跨膜电流，轴向传递 1 1 max ( ) ( ), ( ) n n ions synapse stimulus L L k t k t ions x y k ions synapse t synapse synapse dV I g V V C I I dt I G m n V V I G V V = = = − + + + = − = −  