VsM 5200 Bi-Directional Control Thyristor TAVM 1800A TRMS 2830A 5STB17N5200 sM=29000A 1.02V r=0.320mg DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device Blocking Part Number 5STB 17N5200 5STB 17N50005STB 17N4600 Conditions 5200V 5000V 4600V f=5 Hz, tp 4400V 4200V 4000V 50 Hz, tp 400mA IVs 400mA T1=125°C dv/dtcrit 2000V/μs @Exp.to0.67×Vs VRM is equal to VsM up to T=110C Mechanical data Mounting force nom 90 KN 一小一 min 81 kN max 108kN Gate B Acceleration Device unclamped 50m/s Device clamped Coth B 2 center holes m 2.9k Surface creepage distance 53 mm Foston connectors 5. 3X0. 8 Air strike distance 22 mm ABB Semiconductors AG reserves the right to change specifications without notice. RDABB Semiconductors AG reserves the right to change specifications without notice. VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Part Number 5STB 17N5200 5STB 17N5000 5STB 17N4600 Conditions VSM 5200 V 5000 V 4600 V f = 5 Hz, tp = 10ms VRM 4400 V 4200 V 4000 V f = 50 Hz,tp = 10ms ISM ≤ 400 mA VSM IRM ≤ 400 mA VRM Tj = 125°C dV/dtcrit 2000 V/µs @ Exp. to 0.67xVSM VRM is equal to VSM up to Tj = 110°C Mechanical data FM Mounting force nom. 90 kN min. 81 kN max. 108 kN a Acceleration Device unclamped Device clamped 50 100 m/s2 m/s2 m Weight 2.9 kg DS Surface creepage distance 53 mm Da Air strike distance 22 mm