lon Implantation Beam of energetic dopant ions is fired into surface of wafer Energies are 5-200 keV This leads to implantation(burial) of the ions into the substrate What happens at the substrate Tons can: bounce off absorb sputter atoms(10ev -10 kev) implant into surface(5 kev -200 kev) and do tremendous damage 3.155J/6.152J.2003Ion Implantation Beam of energetic dopant ions is fired into surface of wafer. Energies are 5 - 200 keV. This leads to implantation (burial) of the ions into the substrate. What happens at the substrate? Ions can: bounce off absorb sputter atoms (10 eV - 10 keV) implant into surface (5 keV - 200 keV)… and do tremendous damage 3.155J/6.152J, 2003