6.152J3.155J 1)Reactants: first need high-purity Si 6.12J/3.155J Microelectronic processing Making high-purity Si: distill I SO2ban·Si+py, SiHCI(D1100C“ Si +hcl MGS-98%6 pure EGS 9 9s pure (Electronic grade S) nAC 二---#1500°c Nov.26,20036.152J/3.155J 8 16 Nov.26 , 2003 6.12J / 3.155J Microelectronic processing 1) Reactants: first need high-purity Si 1500°C seed tang VAC crystal SiO2 Si + CO(g) SiHCl3(l) Si + HCl C boat HCl + H2 distill H2 1100°C poly Making high-purity Si: MGS -98% pure (Metallurgical grade Si) EGS 9 9s pure (Electronic grade Si)