Bonding in Semiconductor 元素半导体 带隙 Elemental Band gap VBT Semiconductors, (e) C 5.5 Si 1.1 Ge 0.67 Sn 0.08 Pb ? 化合物半导体 Compound Band gap Semiconductors, (ev) GaP 2.2 GaAs 1.43 GaP AS1-x 2.2l.43 CdS 2.4 CdSn 1.7 CdTe 1.44Bonding in Semiconductor Elemental Band gap Semiconductors, (eV) C 5.5 Si 1.1 Ge 0.67 Sn 0.08 Pb ? VBT 元素半导体 带隙 Pb ? Compound Band gap Semiconductors, (eV) GaP 2.2 GaAs 1.43 GaPxAs1-x 2.2 ～1.43 CdS 2.4 CdSn 1.7 CdTe 1.44 化合物半导体