Phase change memory DRAM PCM NAND Flash Page size 64B 64B 2KB Page read latency 20-50ns SoNs 25us Page write latency 20-50ns 1us w500us Endurance 106-108 10410 Idle power 100mW/GB 1mW/GB 1-10mW/GB Density 1x 2-4x 4x cons: Asymmetry read /write latency Limited write enduranceDRAM PCM NAND Flash Page size 64B 64B 2KB Page read latency 20-50ns ~50ns ~25us Page write latency 20-50ns ~1us ~500us Endurance ∞ 106 -108 104 -105 Idle power ~100mW/GB ~1mW/GB 1-10mW/GB Density 1x 2-4x 4x Phase change memory •Cons: −Asymmetry read/write latency −Limited write endurance