3.155J/6.152 J Fall2003 MOSCAP function. The structures to be tested on the mask are symmetrical by design, so do need to be corrected. Still, the average of the two measurements yields a better estir the sheet resistance of the underlying material Rsquare=(4.53/2)[(VcD/AB)+(VBc/aD)]Ohms/square To measure the sheet resistance using the Van der Pauw structure, use program PPOLYVDP. Setup of leads for both are as follows SMU2 current Source SMU 1 15] VM 1 Voltage Tap [21 VM 2 ge lap Average resistivity can then be determined simply by multiplying the measured sheet resistance by the thickness of the polysilicon layer Physical Constants: es=1.05*102(F/cm) eoX=345*10(F/c q=1.6X10c kt/q=.026 V Nc=286×1019#/cn ni=1010#(cm <Appendices3.155J / 6.152J Fall 2003 MOSCAP 10 function. The structures to be tested on the mask are symmetrical by design, so do not need to be corrected. Still, the average of the two measurements yields a better estimate of the sheet resistance of the underlying material. Rsquare = (4.53/2) [(VCD/IAB) + (VBC/IAD)] Ohms/square . To measure the sheet resistance using the Van der Pauw structure, use program PPOLYVDP. Setup of leads for both are as follows: SMU 1 -- Current Source -- [7] SMU 2 -- Ground -- [15] VM 1 -- Voltage Tap -- [21] VM 2 -- Voltage Tap -- [5] Average resistivity can then be determined simply by multiplying the measured sheet resistance by the thickness of the polysilicon layer. Physical Constants: es=1.05*10-12 (F/cm) eox=3.45*10-13 (F/cm) q = 1.6 x 10-19 C kt/q = .026 V Nc = 2.86 x 1019 #/cm3 ni = 1010 #/cm3 <Appendices>