5sTB17N5200 Thermal Operating junction temperature range -40.125° T Storage temperature range 40.150°C Thermal resistance 22.8 K/kW Anode side cooled unction to case 22.8 K/kw Cathode side cooled 11.4 K/kW Double side cooled RthcH Thermal resistance case to 4 K/kw Single side cooled heat sink 2 K/kW Double side cooled Analytical function for transient thermal impedance Zc()=∑R -tri 3 a010 0.100 1.000 t(s)08651015580021200075 Fig. 1 Transient thermal impedance junction to case On-state characteristic model: 4000 VT=A+B-iT+CIn(iT+1)+D.IT Valid for i= 500-4000 A 3600 25°C 1309 0.00008 0.125 0.026 2800 IT(kA) 2400 2000 1200 T=125°c 0.81,012 Fig. 2 On-state characteristics Fig 3 On-state characteristics ABB Semiconductors AG reserves the right to change specifications without notice Doc. No. 5SYA1036-03 Sep 015STB 17N5200 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1036-03 Sep. 01 page 3 of 6 Thermal Tj Operating junction temperature range -40…125 °C Tstg Storage temperature range -40…150 °C RthJC Thermal resistance 22.8 K/kW Anode side cooled junction to case 22.8 K/kW Cathode side cooled 11.4 K/kW Double side cooled RthCH Thermal resistance case to 4 K/kW Single side cooled heat sink 2 K/kW Double side cooled Analytical function for transient thermal impedance: Z (t) = R(1- e ) n i 1 -t/ thJC i i
= τ i 1 234 Ri (K/kW) 6.77 2.51 1.34 0.78 τi (s) 0.8651 0.1558 0.0212 0.0075 0.001 0.010 0.100 1.000 10.000 t [s] 0 5 10 15 ZthJC [K/kW] BN1 180° sine: add 1 K/kW 180° rectangular: add 1 K/kW 120° rectangular: add 1 K/kW 60° rectangular: add 2 K/kW Fm = 81..108 kN Double-side cooling Fig. 1 Transient thermal impedance junction to case. On-state characteristic model: VT = A+ B⋅iT +C⋅ln(iT +1)+ D⋅ IT Valid for iT = 500 – 4000 A A B CD 1.309 0.00008 -0.125 0.026 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics