Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

Local or remote control Microprocessor controlled RS-232/RS-485 CAN Complete diode laser control Affordably priced and monitoring solution Air or water cooling( specify)

一、放大电路频率响应的改善 1.低频特性的改善

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

Rectifier Diode: Current vs Mounting area

主要用于高输入阻抗放大器的输入级 2.7.1场效应管放大电路的三种接法

一、耦合电感的串联 异名端相接称顺接,同名端相接称反接

2.4放大电路静态工作点的稳定 2.4.1静态工作点稳定的必要性 ①失真