Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

Supplement Practical Application Issues of Power Semiconductor Devices and d Gate Triggering Control Circuit for Thyristor Rectifiers

The concept of composite converter Composite converter Combination of two or more converters in cascaded connection Indirect ac to ac converters (AC-DC-AC converters) Composite converters ndirect dc to dc converters

7.1 Basic concepts on soft-switching 7.2 Classification of soft-switching- techniques 7.3 Typical soft-switching circuits and techniques

6.1 Basic principles 6.2 Some major PWM techniques in DC/AC inverters 6.3 PWM techniques with feedback control 6.4 PWM rectifiers