SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency
Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource
Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET
