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MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002
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Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking
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Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource
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TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101
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Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET
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MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE
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Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating
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External dimensions(Unit: mm) High frequency rectification (1)Small power mold type(PMDS) (2) Ultra low VF (3)Very fast recovery
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1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) (1)General purpose rectification (2) Surge absorption
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第一章绪论 一、软件工程产生的背景 二、软件工程的有关概念 三、软件生存周期及软件过程模型 四、软件开发方法 五、软件开发工具
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