Microelectronics Processing technology Fall Term 2003 Instructions for the mems Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC Lab report will be used Contents: Your Letter should include the following sections

MEMS Mask layout Die leve Dark-field mask Dimensions are in micron

Evaporation and sputter deposition [15] 1. a)In the plasma of a sputter deposition system, consider an argon atom that is ionized during a collision in the plasma. i) Express the ratio of the acceleration of the liberated electron to that of the argon ion in terms of M and m, the mass of the ion and electron; give the numerical value of this ratio, and say in which

Some useful equations for Quiz# 2 Constants:kB=1.38×1023J/K=862×105eV/K,e=16×101Coul I atm=760 Torr=10 Pa Ideal gas: Pv=NkBT N/=n=C(concentration), J

Microelectronics Processing Technology Spring Term, 200. Quiz 1 90 min/90 points total March 19 2003 Note: Be brief and relevant in your answers, and use sketches. Show your work. k=1.3810-23J/K=8.6210-eV/K 40 1. Film deposition, CVD )Discuss briefly what factors affect the microstructure a film grown on a substrate

Gas flux across concentration gradient: J=h(Cg-Cs ), Cs=concentration at surface Flux for chemical reaction: J(#/vol s)=k Cs, where k=koexp[-AG/(kBT)I Film growth velos/ hk ii where Nr is number of deposited species/cm Diffusio

All the questions are from Plummer, Chapter 10, p.679-680, which was handed out in class 1)Question 10.3 2) Question 10.4 3)Question 10.5 4) Question 10.6

1)Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm