Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP

MEMS LAB SESSION 2 Undercut Silicon Nitride using KOH Etching OVERVIEW OF LAB SESSION: This lab session utilizes potassium hydroxide(koh) wet etching to undercut and release the silicon nitride cantilevers and fixed-fixed beams. In Step

Some useful equations for Quiz# 2 Constants:kB=1.38×1023J/K=862×105eV/K,e=16×101Coul I atm=760 Torr=10 Pa Ideal gas: Pv=NkBT N/=n=C(concentration), J

Problem 1 Deal-Grove model states that the thickness of the oxide is related to a time constant r and two constants A and b by the relation

Solubility limit for P at 1273 K is Co 2 1 x 10 cm\. Intrinsic carrier concentration is 10 cm\. Thus, before including higher order terms, Do=13x10-4 cm2/s. But with first order and second order correction terms

(1)收割机械 (2)回转式切割器 (3)往复式切割器

All the questions are from Plummer, Chapter 10, p.679-680, which was handed out in class 1)Question 10.3 2) Question 10.4 3)Question 10.5 4) Question 10.6

§3 - 1 概述 §3 - 2 网络计划技术 概述( N.P.T ) ( Network Planning Techniques )

4.1 引言 4.2 基2FFT算法 4.3 进一步减少运算量的措施 4.4 分裂基FFT算法 4.5 离散哈特莱变换(DHT)

2-1变压器中主磁通和漏磁通的性质和作用有什么不同,它们各由什么磁动势产生? 答:主磁通经过铁心形成闭合回路,与一、二次绕组同时交链并在其中产生感应电动势,是变压器 实现能量转换与传递的媒介。它也是变压器的工作磁通,占总磁通的绝大部分。在分析变压器时用 激磁电抗Xm来反应主磁通的作用。由于主磁通磁路的非线性,Xm不是常数,而是随磁路饱和程度 的增加而减小