Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

宁波工程学院：2022版电子科学与技术专业人才培养方案（专升本）

4.1多谐振荡器 4.2单稳态触发器 4.3施密特触发器

5.1概述 5.2D/A转换器 5.3A/D转换器

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

9.1非正弦 周期信号 9.3 非正弦 周期信号的 有效值、平均值 和平均功率