SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

一、填空(本题25分) 1.共射共集共基 2.饱和区截止区放大区正偏反偏 3.锗PNP集电基射 4.提高降低加宽减小增大 5.多级放大电路单级放大电路

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

一、四维电流密度矢量 1、电荷密度的可变性 电荷是洛伦兹标量,即Q=Q,但电荷密度与体积有关, 必然是一个可变量(设静止密度为P,它是一不变量)。 设带电体与y固连,运动速度为p=Po,dV=dV ∑系观察者测量带电体密度分布为,体积为dV,P

1.1 机电传动控制的目的与任务 1.2 机电传动控制的发展

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

1.电荷和静电场 一、库仑定律和电场强度 1.库仑定律

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

7.1 磁路 7.2 交流铁心线圈电路 7.3 单相变压器 7.4 三相变压器 7.5 特殊变压器

其他电器主要包括自动开关、避雷器、互感器、传感器、万能转换开关、 按键开关、蓄电池等。本章主要介绍各个电器的作用、技术参数、在电力机车 上的使用情况、基本结构、动作原理、使用注意事项、维护与保养等内容