Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

一、电解 电解是利用外部电源使化学反应向非自发方向 进行的过程

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

3.3 电路中的谐振 3.3.1 串联谐振 3.3.2 并联谐振 3.4 网络的频率特性 — 转移函数 3.4.1 转移函数的幅频特性和相频特性 3.4.2 低通电路、高通电路 3.4.3 波特图

1、分解、等效的概念； 2、单口网络的等效化简，实际电源的等效变换 ; 3、置换、戴维南、诺顿定理，最大功率传递定理； 4、三端网络T形和形的等效变换。(不考)

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

一、定理陈述 对任意含源单口网络N，都可以用一个电压源与一个电阻相串联来等效

第三章门电路 3.1概述 3.2半导体二极管门电路 3.3CMOS门电路 3.3.2CMOS反相器的电路结构和工作原理 3.3.5其他类型的CMOS门电路 3.5TTL门电路 3.5.2TTL反相器的电路结构和工作原理 3.5.5其他类型的TTL门电路