点击切换搜索课件文库搜索结果(10307)
文档格式:PDF 文档大小:201.32KB 文档页数:12
Rectifier Diode: Current vs Mounting area
文档格式:PDF 文档大小:309.77KB 文档页数:6
Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating
文档格式:PDF 文档大小:60.75KB 文档页数:2
Local or remote control Microprocessor controlled RS-232/RS-485 CAN Complete diode laser control Affordably priced and monitoring solution Air or water cooling( specify)
文档格式:PDF 文档大小:57.77KB 文档页数:6
The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The
文档格式:PDF 文档大小:129.49KB 文档页数:6
Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking
文档格式:PDF 文档大小:428.15KB 文档页数:22
TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101
文档格式:PDF 文档大小:145.86KB 文档页数:9
Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity
文档格式:PDF 文档大小:175.28KB 文档页数:8
The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency
文档格式:PDF 文档大小:51.66KB 文档页数:7
The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type
文档格式:PDF 文档大小:105.23KB 文档页数:9
VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:
首页上页583584585586587588589590下页末页
热门关键字
搜索一下,找到相关课件或文库资源 10307 个  
©2008-现在 cucdc.com 高等教育资讯网 版权所有