Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) （1)General purpose rectification （2) Surge absorption

同济大学《机械设计》电子教材： 带传动自动张紧图

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