818-5 Combination of i-p characteristics 1. Series combination DID composite D U1U2U1+U2) composite 2. Parallel combination D1 D2 (1+)
§18-5 Combination of i-v characteristics 1. Series combination 2. Parallel combination D1 D2 − + 1 − + 2 − + i D1 D2 i composite 1 2 ( ) 1 +2 D1 D2 i composite 1 i 2 i ( ) 1 2 i + i D1 D2 − + i 2 i 1 i
3. Voltage bias(偏置)4. Current bias 5. Inversion(倒置) Ⅰ→→ ND D D i=∫(U)+i i=∫(u)i=f(U-,) fop) i=f(o)
i − + − + D − + s D s i i = f () ( ) ( ) D s f i f = = − i i = f () s i = f () + i s i 3. Voltage bias(偏置) i − + D i 5. Inversion(倒置) i − + D D i s i 4. Current bias
Example3: Diode logic gates(逻辑门) SB OLE正 ①a 615 signifies that the voltage is less than 0"signifies that the voltage is greater than or equal to 110 加o (
Example 3: Diode logic gates(逻辑门). sA sB s i out sB sA s i out sA sB s i out out s sA sB s i out “1” signifies that the voltage is less than vs . “0” signifies that the voltage is greater than or equal to vs . sA sB out 0 0 0 0 0 1 1 1 1 1 1 1 − + − + − + s sA sB i R − + out