4)Chemical vapor deposition(CvD)20 points You want to deposit a p+ doped gate oxide for a MOSFET using CVD You chose for the sio reaction SiH4(g)+O2< SiO2(s)+ 2H2(g) a) Circle one of the following reactions that will give you p+ doping of our gate oxide i.2PH3(g)(>2P(s)+3H2(g)or B2H6(g)4>2B(s)+3H2(g) b) Define the terms in the Cvd growth equation and give the dimensions, e.g. number/(sec-area), of each C/N h k c) Write the equation for the film growth rate in the regime where it is limited by reaction kineticsName: ___________________________ 4) Chemical vapor deposition (CVD) [20 points] You want to deposit a p+ doped gate oxide for a MOSFET using CVD. You chose for the SiO2 reaction: SiH4 (g) + O2 ↔ Si O2(s) + 2H2 (g). a) Circle one of the following reactions that will give you p+ doping of your gate oxide. i. 2PH3 (g) ↔ 2 P (s) + 3H2 (g) or ii. B2H6 (g) ↔ 2B (s) + 3H2 (g) b) Define the terms in the CVD growth equation and give the dimensions, e.g. number/(sec-area), of each: C /N v = g 1 1 + h k g s c) Write the equation for the film growth rate in the regime where it is limited by reaction kinetics. 7