c) Oxide growth on Si is described by the deal-Grove quadratic equation lox+ Atox=b(t+r with t=( t0 Ato)/B Write the expression for growth rate dtox/dt in one of the limits below I thin oxide fox << Atoy II) thick oxide tox >> Atox d) Give a physical reason why oxide growth is generally faster on doped Si than on pure si 6Name: ___________________________ c) Oxide growth on Si is described by the Deal-Grove quadratic equation t 2 + At = B(t + τ) with τ = ( t0 2 ox ox + At0 ) / B Write the expression for growth rate dtox / dt in ONE of the limits below: I) thin oxide tox2 << Atox OR II) thick oxide tox2 >> Atox d) Give a physical reason why oxide growth is generally faster on doped Si than on pure Si. 6