3.单源前驱体( Single-Source Precursors) 与沉积复杂薄膜(即,由两种或两种以上的元素组成的薄膜)有关的问 题之一是可重现和可控制地翰送含金属化合物到基体表面并控制薄膜的 化学计量。 Different precursors Different volatilities Different evaporation rates and partial pressures Each precursor must be delivered separately to the Cvd reactor through(heated)mass flow controllers The deposition must be carried out under conditions where the feed rate of the least volatile precursor is the rate- limiting step(挥发性最小的前驱体的输送速率成为沉 积速率的速度控制步骤) Severe restriction on the deposition rate and film qua3. 单源前驱体（Single-Source Precursors） 与沉积复杂薄膜（即，由两种或两种以上的元素组成的薄膜）有关的问 题之一是可重现和可控制地输送含金属化合物到基体表面并控制薄膜的 化学计量。 Different precursors Different volatilities Different evaporation rates and partial pressures Each precursor must be delivered separately to the CVD reactor through (heated) mass flow controllers. The deposition must be carried out under conditions where the feed rate of the least volatile precursor is the rate-limiting step（挥发性最小的前驱体的输送速率成为沉 积速率的速度控制步骤） Severe restriction on the deposition rate and film quality