5sGA30J2501 GTO Data On-state Max average on-state current 1300A Half sine wave, Tc =85C ITRMs Max RMs on-state current 2040A ITSMMax. peak non-repetitive 30 ka tp 10msT=125℃c surge current 51 katp 1 ms After surge 1?t Limiting load integral 45010°A2st= 10 ms VD=VR=OV 1.30106A2stp On-state voltage 2.50V 3000A To Threshold voltage 1.50V r=400-4000AT=125° Slope resistance 0.33mg Holding current 100A T=25°C Gate Gate trigger voltage 1.2V 24VT;=25°C Gate trigger current 4.0A RA =0.1 Q2 VGRM Repetitive peak reverse voltage17V GRM Repetitive peak reverse current 50 mA V Turn-on switching di/dterit Max. rate of rise of on-state 500Apsf=200z=3000A,T= current 1000 A/us f=1Hz GM=30 A, dig/dt=20 A/us Delay time 2.5μs 0.5VRMT=125°C Rise time 5.0ys =3000 a di/dt=300Aμs ton(min)Min on-time 100 Hs IGM= 30a dig/dt= 20 A/us Turn-on energy per pulse 2.00 Ws C 5 uF Rs 5Ω Turn-off switching Max controllable turn -off 3000A VoM= VDRM digo/dt 40 Aus current 5 HF ≤0.3uH Storage time 250μsV= DRM Fall time 3.0 Aus tot Min off-time 100 us ITGQ = ITGOM Eoff Turn-off energy per pulse 4.7 WsCs 5μFR 5Q Peak turn - off gate current 1000A Ls≤0.3pH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000 page 2 of 65SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 2 of 6 GTO Data On-state ITAVM Max. average on-state current 1300 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 2040 A ITSM 30 kA tP = 10 ms Tj Max. peak non-repetitive = 125°C surge current 51 kA tP = 1 ms After surge: I 2 t Limiting load integral 4.50⋅106 A2 s tP = 10 ms VD = VR = 0V 1.30⋅106 A2 s tP = 1 ms VT On-state voltage 2.50 V IT = 3000 A VT0 Threshold voltage 1.50 V IT = 400 - 4000 A Tj = 125 °C rT Slope resistance 0.33 mΩ IH Holding current 100 A Tj = 25 °C Gate VGT Gate trigger voltage 1.2 V VD = 24 V Tj = 25 °C IGT Gate trigger current 4.0 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM Turn-on switching di/dtcrit Max. rate of rise of on-state 500 A/µs f = 200Hz IT = 3000 A, Tj = 125 °C current 1000 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 2.5 µs VD = 0.5 VDRM Tj = 125 °C tr Rise time 5.0 µs IT = 3000 A di/dt = 300 A/µs ton(min) Min. on-time 100 µs IGM = 30 A diG/dt = 20 A/µs Eon Turn-on energy per pulse 2.00 Ws CS = 5 µF RS = 5 Ω Turn-off switching ITGQM Max controllable turn-off 3000 A VDM = VDRM diGQ/dt = 40 A/µs current CS = 5 µF LS ≤ 0.3 µH ts Storage time 25.0 µs VD = ½ VDRM VDM = VDRM tf Fall time 3.0 µs Tj = 125 °C diGQ/dt = 40 A/µs toff(min) Min. off-time 100 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 4.7 Ws CS = 5 µF RS = 5 Ω IGQM Peak turn-off gate current 1000 A LS ≤ 0.3 µH