VDRM E 2500 V Gate turn-off Thyristor ITGOM E 3000 A 30 KA v =1.50V 5SGA30J2501 =0.33ms Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500VVeR≥2V VRRM Repetitive peak reverse voltage 17V IDRM Repetitive peak off-state current< 100 mA VD=VDRM VeP≥2V IRRM Repetitive peak reverse current< 50 mA VR=VE RGK= Permanent DC voltage for 100 1400V-40≤T≤125°. Ambient cosmic FIT failure rate radiation at sea level in open air Mechanical data (see Fig 4) Mounting force max 44 kN A Acceleration Device unclamped 50m/s2 Device clamped 200m/s2 M Weight 1.3 kg Surface creepage distance ≥33mm D Air strike distance ≥15mm ABB Semiconductors AG reserves the right to change specifications without notice. ABRABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V ITGQM = 3000 A ITSM = 30 kA VT0 = 1.50 V rT = 0.33 mΩ VDClin = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500 V VGR ≥ 2V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 FIT failure rate 1400 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 4) Fm min. 36 kN Mounting force max. 44 kN A Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 M Weight 1.3 kg DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 15 mm