中国科学技术大学物理系微电子专业 Progress in Microelectronics Year 195919712001Rato Design rule (um) 0.13190↓ VoD(v) 5 5 1.25 4↓ Wafer diameter(mm) 25 30 300 12个 Devices per chip 62×1032×1093×108个 DRAM density(bit 1K 4G4×106个 NVM density(bit) 2K 1G5×105↑ Microprocessor clock 108K2G2×104↑ rate(Hz) Transistors shipped./year10710105×10175×1010↑ Average T price (S) 0.35×1075×10 Semiconductor Devices 2021/2/4中国科学技术大学物理系微电子专业 2021/2/4 Semiconductor Devices 21