CR1473SYDCR1473sV @ ENEx 0.1000 □■口 □ Single side cooled 止 Double side cooled □ 000 Effective Thermal Resistance d Conduction Junction to case-C/ Double Sided Sided □■口 □ d.c 0.0095 0.019 0.0105 0.0200 3 phase 120 0.0112 6 phase 60°00139 0.000 0001 001 Time-(s Fig 5 Maximum(limit transient thermal impedance-junction to case r=: 100 120 址0写 □■■■ 234510203050 Cycles at 50Hz Fig 6 Surge(non-repetitive)on-state current vs time with 50%Voom at T= 125c) /w.dynexsemi colDCR1473SY / DCR1473SV 6/9 www.dynexsemi.com Fig. 5 Maximum (limit) transient thermal impedance - junction to case Fig. 6 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 0.001 0.01 0.1 1.0 10 100 Time - (s) 0.1000 0.0100 0.0010 0.0001 Thermal impedance - (˚C/W) Single side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective Thermal Resistance Junction to case - ˚C/W Double Sided 0.0095 0.0105 0.0112 0.0139 Single Sided 0.0190 0.0200 0.0207 0.0234 80 60 40 20 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 4 5 50 ms Cycles at 50Hz Duration 0 4.0 I2t value - (A2s x 106) I2t I2t = Î2 x t 2 10.0 100 10 20 30 2.0 6.0 8.0 14.0 12.0 120